The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Oct. 23, 2015
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-do, KR;
Young-Lim Park, Anyang-si, KR;
Wonseok Yoo, Hwaseong-si, KR;
Hyokyoung Kim, Hwaseong-si, KR;
Changyup Park, Hwaseong-si, KR;
Kongsoo Lee, Hwaseong-si, KR;
Wook-Yeol Yi, Hwaseong-si, KR;
Hanjin Lim, Seoul, KR;
Abstract
Provided is a method of forming a semiconductor device. The method can include loading a semiconductor substrate into semiconductor equipment. A base layer can be formed on the loaded semiconductor substrate by performing a base deposition process using a base source material. A first silicon layer can be formed on the base layer to a greater thickness than the base layer by performing a first silicon deposition process using a silicon source material different from the base source material. A first nitrided silicon layer can be formed by nitriding the first silicon layer using a first nitridation process. The semiconductor substrate having the first nitrided silicon layer can be unloaded from the semiconductor equipment.