The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2017

Filed:

Feb. 01, 2016
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Satoshi Murakami, Kanagawa, JP;

Kazutaka Kuriki, Kanagawa, JP;

Mikio Yukawa, Kanagawa, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/58 (2010.01); H01G 11/24 (2013.01); C23C 16/24 (2006.01); H01G 11/30 (2013.01); H01M 4/04 (2006.01); H01M 4/134 (2010.01); H01M 4/1395 (2010.01); H01M 4/66 (2006.01); H01G 11/46 (2013.01); H01M 4/48 (2010.01); H01M 4/52 (2010.01); H01M 10/0525 (2010.01);
U.S. Cl.
CPC ...
H01G 11/24 (2013.01); C23C 16/24 (2013.01); H01G 11/30 (2013.01); H01G 11/46 (2013.01); H01M 4/0428 (2013.01); H01M 4/134 (2013.01); H01M 4/1395 (2013.01); H01M 4/48 (2013.01); H01M 4/52 (2013.01); H01M 4/661 (2013.01); H01M 10/0525 (2013.01); H01M 2220/20 (2013.01); H01M 2220/30 (2013.01); Y02E 60/122 (2013.01); Y02E 60/13 (2013.01); Y02P 70/54 (2015.11); Y02T 10/7022 (2013.01); Y10T 29/417 (2015.01); Y10T 29/49115 (2015.01);
Abstract

An electrode which can have an improved performance such as higher discharge capacity and in which deterioration due to peeling of an active material layer or the like is difficult to occur are provided. The electrode includes an active material layer including a first protrusion, a second protrusion and a continuous active material film, a metal oxide layer, and a continuous mixed layer. The first protrusion, the second protrusion and the continuous active material film includes silicon. The metal oxide layer includes oxygen and a metal element which is capable of forming silicide by reacting with silicon. The continuous mixed layer includes silicon and the metal element.


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