The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2017

Filed:

Dec. 02, 2015
Applicants:

Imec Vzw, Leuven, BE;

Katholieke Universiteit Leuven, Ku Leuven R&d, Leuven, BE;

Inventors:

Ludovic Goux, Leuven, BE;

Attilio Belmonte, Leuven, BE;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 11/56 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 11/5614 (2013.01); G11C 13/0011 (2013.01); H01L 27/2463 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/1266 (2013.01); H01L 45/145 (2013.01); H01L 45/146 (2013.01); G11C 2013/0078 (2013.01); G11C 2013/0083 (2013.01); G11C 2013/0088 (2013.01); G11C 2013/0092 (2013.01);
Abstract

A method is disclosed for operating a Conductive Bridge Random Access Memory (CBRAM) device that includes an electrolyte element sandwiched between a cation supply top electrode and a bottom electrode. The method comprises conditioning the CBRAM device by applying a forming current pulse having a pulse width (t) of 100 ns or less and a pulse amplitude (I) of 10 uA or less, and when programming, setting the conditioned CBRAM device to a Low Resistance State (LRS) by applying a set current pulse having a pulse width (t) of 100 ns or less and a pulse amplitude (I) equal to or larger than the forming current pulse amplitude (I).


Find Patent Forward Citations

Loading…