The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2017

Filed:

Jul. 11, 2012
Applicants:

Cedric Tubert, Sassenage, FR;

Francois Roy, Seyssins, FR;

Pascal Mellot, Lans en Vercors, FR;

Inventors:

Cedric Tubert, Sassenage, FR;

Francois Roy, Seyssins, FR;

Pascal Mellot, Lans en Vercors, FR;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H04N 5/372 (2011.01);
U.S. Cl.
CPC ...
H04N 5/372 (2013.01); H01L 29/06 (2013.01); H01L 29/0603 (2013.01);
Abstract

A device for transferring charges photogenerated in a portion of a semiconductor layer delimited by at least two parallel trenches, each trench including, lengthwise, at least a first and a second conductive regions insulated from each other and from the semiconductor layer, including the repeating of a first step of biasing of the first conductive regions to a first voltage to form a volume accumulation of holes in the area of this portion located between the first regions, while the second conductive regions are biased to a second voltage greater than the first voltage, and of a second step of biasing of the first regions to the second voltage and of the second regions to the first voltage.


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