The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2017

Filed:

Mar. 25, 2016
Applicant:

Tdk Corporation, Tokyo, JP;

Inventor:

Chris Levesque, Fountain Valley, CA (US);

Assignee:

TDK Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/04 (2006.01); H03F 3/19 (2006.01); H03F 1/56 (2006.01); H03F 3/24 (2006.01);
U.S. Cl.
CPC ...
H03F 3/19 (2013.01); H03F 1/565 (2013.01); H03F 3/245 (2013.01); H03F 2200/168 (2013.01); H03F 2200/267 (2013.01); H03F 2200/318 (2013.01); H03F 2200/411 (2013.01); H03F 2200/451 (2013.01);
Abstract

A power amplifier is described. A power amplifier includes at least a first amplifier stage. The power amplifier also includes a first notch filter coupled with the first amplifier stage. The first notch filter is configured to tune to a first frequency. The first notch filter including at least one first set of metal oxide semiconductor variable capacitor arrays. Moreover, the power amplifier includes a first mirrored notch filter coupled with said first amplifier stage. The first mirror notch filter is configured to tune to the mirror of the first frequency. The first mirror notch filter including at least one second set of metal oxide semiconductor variable capacitor arrays.


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