The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2017

Filed:

Apr. 21, 2015
Applicant:

Advanced Optoelectronic Technology, Inc., Hsinchu Hsien, TW;

Inventors:

Ching-Hsueh Chiu, Hsinchu, TW;

Ya-Wen Lin, Hsinchu, TW;

Po-Min Tu, Hsinchu, TW;

Shih-Cheng Huang, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/58 (2010.01); H01L 33/00 (2010.01); H01L 21/302 (2006.01); H01L 33/22 (2010.01); H01L 33/44 (2010.01); G02B 1/11 (2015.01);
U.S. Cl.
CPC ...
H01L 33/22 (2013.01); G02B 1/11 (2013.01); H01L 21/302 (2013.01); H01L 33/005 (2013.01); H01L 33/0079 (2013.01); H01L 33/44 (2013.01); H01L 33/58 (2013.01); H01L 2224/14 (2013.01); H01L 2224/16225 (2013.01);
Abstract

A flip-chip light emitting diode, including a substrate, an N-type semiconductor layer, a light emitting layer and a P-type semiconductor layer series mounted along a height direction of the flip-chip light emitting diode. A P electrode is formed on the P-type semiconductor layer and an N electrode is formed on the N-type semiconductor. A top surface of the substrate is away from the light emitting layer. A plurality of micron main portions is formed on the top surface. An outer surface of each main body has a plurality of nanometer protrusions. A method for manufacturing the flip chip light emitting diode is also provided.


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