The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Apr. 23, 2014
Applicant:
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Inventors:
Andreas Löffler, Neutraubling, DE;
Tobias Meyer, Ihrlerstein, DE;
Adam Bauer, Donaustauf, DE;
Christian Leirer, Friedberg, DE;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 21/02 (2006.01); H01L 33/04 (2010.01); H01L 33/14 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 21/02499 (2013.01); H01L 21/02505 (2013.01); H01L 21/02507 (2013.01); H01L 33/0075 (2013.01); H01L 33/04 (2013.01); H01L 33/14 (2013.01); H01L 33/325 (2013.01);
Abstract
An optoelectronic component includes a semiconductor layer structure having a quantum film structure, and a p-doped layer arranged above the quantum film structure, wherein the p-doped layer includes at least one first partial layer and a second partial layer, and the second partial layer has a higher degree of doping than the first partial layer.
Löffler, Andreas. (2017). Optoelectronic gan-based component having increased esd resistance via a superlattice and method for the production thereof (U.S. Patent No. 9680052). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9680052
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile