The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Feb. 02, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/08 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01); H01L 33/42 (2010.01); H01L 33/20 (2010.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0075 (2013.01); H01L 33/0079 (2013.01); H01L 33/08 (2013.01); H01L 33/382 (2013.01); H01L 33/40 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01); H01L 33/20 (2013.01); H01L 33/22 (2013.01); H01L 33/38 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2933/0016 (2013.01);
Abstract
There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.