The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2017

Filed:

Mar. 19, 2014
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventor:

Andreas Plöβl, Regensburg, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); B23K 26/00 (2014.01); H01L 33/32 (2010.01); H01S 5/02 (2006.01); B23K 26/40 (2014.01); H01S 5/343 (2006.01); B23K 103/16 (2006.01); B23K 103/00 (2006.01);
U.S. Cl.
CPC ...
H01L 33/007 (2013.01); B23K 26/0057 (2013.01); B23K 26/40 (2013.01); H01L 33/0095 (2013.01); H01L 33/32 (2013.01); H01S 5/0203 (2013.01); H01S 5/0213 (2013.01); H01S 5/343 (2013.01); B23K 2203/16 (2013.01); B23K 2203/172 (2015.10); B23K 2203/50 (2015.10); H01L 2933/0033 (2013.01);
Abstract

In at least one embodiment, a method is designed to produce optoelectronic semiconductor chips. A carrier assembly, which is a sapphire wafer, is produced. A semiconductor layer sequence is applied to the carrier assembly. The carrier assembly and the semiconductor layer sequence are divided into the individual semiconductor chips. The dividing is implemented by producing a multiplicity of selectively etchable material modifications in the carrier assembly in separation region(s) by focused, pulsed laser radiation. The laser radiation has a wavelength at which the carrier assembly is transparent. The dividing includes wet chemically etching the material modifications, such that the carrier assembly is singulated into individual carriers for the semiconductor chips solely by the wet chemical etching or in combination with a further material removal method.


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