The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2017

Filed:

Jan. 10, 2013
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Joachim Hertkorn, Alteglofsheim, DE;

Lorenzo Zini, Regensburg, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 33/005 (2013.01); H01L 33/007 (2013.01); H01L 33/22 (2013.01); H01L 33/0079 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method for producing a radiation-emitting semiconductor component is provided, comprising the following steps: —providing a growth substrate (), —depositing a nucleation layer () on the growth substrate (), —applying a structured dielectric layer () to the nucleation layer (), —applying an epitaxial layer () by means of a FACELO process to the structured dielectric layer (), —epitaxial growth of an epitaxial layer sequence () on the epitaxial layer (), wherein the epitaxial layer sequence () comprises an active zone () that is suitable for producing electromagnetic radiation.


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