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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9680034 B1

PDFFull Text
Date of Patent:
Jun. 13, 2017

Filed:

Mar. 30, 2016

Manufacturing method for semiconductor device with point defect region doped with transition metal

Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, JP;

Inventor:

Shoji Kitamura, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-Shi, JP;

Attorney:

Rossi, Kimms & McDowell LLP

Primary Examiner:

Selim Ahmed

Int. Cl.
CPC ...
H01L 29/36 (2006.01); H01L 29/868 (2006.01); H01L 21/22 (2006.01); H01L 21/263 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/225 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/868 (2013.01); H01L 21/22 (2013.01); H01L 21/221 (2013.01); H01L 21/225 (2013.01); H01L 21/263 (2013.01); H01L 21/3105 (2013.01); H01L 21/31111 (2013.01); H01L 29/063 (2013.01); H01L 29/36 (2013.01); H01L 29/6609 (2013.01); H01L 29/66136 (2013.01); H01L 29/66204 (2013.01); H01L 29/861 (2013.01);
Abstract

A simplified manufacturing process stably produces a semiconductor device with high electrical characteristics, wherein platinum acts as an acceptor. Plasma treatment damages the surface of an oxide film formed on a ntype drift layer deposited on an ntype semiconductor substrate. The oxide film is patterned to have tapered ends. Two proton irradiations are carried out on the ntype drift layer with the oxide film as a mask to form a point defect region in the vicinity of the surface of the ntype drift layer. Silica paste containing 1% by weight platinum is applied to an exposed region of the ntype drift layer surface not covered with the oxide film. Heat treatment inverts the vicinity of the surface of the ntype drift layer to p-type by platinum atoms which are acceptors. A p-type inversion enhancement region forms a p-type anode region.

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