The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2017

Filed:

Apr. 01, 2016
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventor:

Masataka Watanabe, Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/737 (2006.01); H01L 29/205 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7371 (2013.01); H01L 29/0649 (2013.01); H01L 29/0821 (2013.01); H01L 29/205 (2013.01); H01L 29/66242 (2013.01); H01L 29/66272 (2013.01);
Abstract

A semiconductor device and a process to form the same are disclosed. The semiconductor device includes a support, an active semiconductor stack including a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer, the first to third semiconductor layers being sequentially stacked on the support, and an electrode on the third semiconductor layer. The first semiconductor layer and the second semiconductor layer provide a buried region in a portion under the electrode, the buried region being filled with a material having a first dielectric constant smaller than a second dielectric constant of the first semiconductor layer and a third dielectric constant of the second semiconductor layer.


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