The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Mar. 26, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Hwi-Chan Jun, Yongin-si, KR;
Deok-Han Bae, Anyang-si, KR;
Hyun-Seung Song, Incheon, KR;
Seung-Seok Ha, Hwaseong-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/31144 (2013.01); H01L 21/76897 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01);
Abstract
Embodiments of the disclosure relate to a method for manufacturing a semiconductor device including a field effect transistor with improved electrical characteristics. According to embodiments of the disclosure, self-aligned contact plugs may be effectively formed using a metal hard mask portion disposed on a gate portion. In addition, a process margin of a photoresist mask for the formation of the self-aligned contact plugs may be improved by using the metal hard mask portion.