The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Sep. 22, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Ki Hwan Kim, Seoul, KR;
Jung Gun You, Ansan-si, KR;
Gi Gwan Park, Hwaseong-si, KR;
Dong Suk Shin, Yongin-si, KR;
Jin Wook Kim, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device includes a substrate having first and second regions, a first fin-type pattern and a second fin-type pattern formed in the first region and extending in a first direction, and a third fin-type pattern and a fourth fin-type pattern formed in the second region and extending in a third direction. A first source/drain is formed on the first fin-type pattern and a second source/drain region is formed on the second fin-type pattern. Each of first and second source/drains have a cross section defining a same convex polygonal shape. A third source/drain is formed on the third fin-type pattern and a fourth source/drain region is formed on the fourth fin-type pattern. Cross-sections of the third and fourth source/drains define different convex polygonal shapes from one another.