The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Jul. 30, 2015
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Abstract
There is provided a method of manufacturing a Fin Field Effect Transistor (FinFET). The method may include: forming a fin on a semiconductor substrate; forming a dummy device including a dummy gate on the fin; forming an interlayer dielectric layer to cover regions except for the dummy gate; removing the dummy gate to form an opening; implanting ions to form a Punch-Through-Stop Layer (PTSL) in a portion of the fin directly under the opening, while forming reflection doped layers in portions of the fin on inner sides of source/drain regions; and forming a replacement gate in the opening.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile