The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2017

Filed:

Apr. 10, 2015
Applicant:

SK Hynix Inc., Icheon-Si, KR;

Inventor:

Jung-Nam Kim, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-Si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/21 (2006.01); H01L 27/24 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 45/00 (2006.01); H01L 27/22 (2006.01); G06F 13/16 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2463 (2013.01); G06F 13/1673 (2013.01); H01L 27/228 (2013.01); H01L 27/2436 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 45/06 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); G11C 11/21 (2013.01); Y02B 60/1228 (2013.01);
Abstract

An electronic device is provided. An electronic device according to an example of the disclosed technology includes a semiconductor memory, the semiconductor memory including: a substrate including a recess formed in the substrate; a gate including at least a portion that is buried in the substrate; a junction formed at both sides of the gate in the substrate; and a memory element electrically connected to the junction at one side of the gate, wherein the junction includes: a barrier layer formed over the recess such that a thickness of the barrier layer formed over a bottom surface of the recess is different from that of the barrier layer formed over a side surface of the recess; a contact pad formed over the barrier layer so as to fill the recess; and an impurity region formed in the substrate and located under the contact pad.


Find Patent Forward Citations

Loading…