The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
May. 13, 2015
Applicants:
Jong Chul Park, Seongnam-si, KR;
Shin Jae Kang, Seoul, KR;
Shin Kwon, Yongin-si, KR;
Kyung Rae Byun, Suwon-si, KR;
Inventors:
Jong Chul Park, Seongnam-si, KR;
Shin Jae Kang, Seoul, KR;
Shin Kwon, Yongin-si, KR;
Kyung Rae Byun, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/08 (2006.01); H01L 27/22 (2006.01); G11C 11/16 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); G11C 11/161 (2013.01); H01L 43/10 (2013.01);
Abstract
A semiconductor device may include a first magnetic layer including a plurality of first regions configuring a plurality of memory cells and spaced apart from each other on a substrate, and a second region encompassing the plurality of first regions and electrically isolated from the first regions, a tunnel barrier layer disposed on the first magnetic layer, and a second magnetic layer disposed on the tunnel barrier layer.