The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2017

Filed:

Sep. 15, 2016
Applicants:

Matthias Merz, Leuven, BE;

Youri Victorovitch Ponomarev, Leuven, BE;

Mark Van Dal, Heverlee, NL;

Inventors:

Matthias Merz, Leuven, BE;

Youri Victorovitch Ponomarev, Leuven, BE;

Mark van Dal, Heverlee, NL;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); B81C 1/00 (2006.01); B81B 7/02 (2006.01); G01P 15/06 (2006.01); H01L 23/00 (2006.01); B81C 99/00 (2010.01); B81B 7/00 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/525 (2006.01); H01L 23/528 (2006.01); G01P 15/08 (2006.01);
U.S. Cl.
CPC ...
H01L 23/564 (2013.01); B81B 7/0006 (2013.01); B81C 1/00246 (2013.01); B81C 99/005 (2013.01); G01P 15/06 (2013.01); G01P 15/0802 (2013.01); H01L 21/768 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/5256 (2013.01); B81B 2201/0235 (2013.01); B81B 2203/0315 (2013.01); B81B 2207/015 (2013.01); B81C 2201/013 (2013.01); B81C 2203/0136 (2013.01); B81C 2203/0714 (2013.01); G01P 2015/0862 (2013.01); G01P 2015/0877 (2013.01);
Abstract

Disclosed is a semiconductor device comprising a stack of patterned metal layers separated by dielectric layers, the stack comprising a first conductive support structure and a second conductive support structure and a cavity in which an inertial mass element comprising at least one metal portion is conductively coupled to the first support structure and the second support structure by respective conductive connection portions, at least one of said conductive connection portions being designed to break upon the inertial mass element being exposed to an acceleration force exceeding a threshold defined by the dimensions of the conductive connection portions. A method of manufacturing such a semiconductor device is also disclosed.


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