The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2017

Filed:

Mar. 12, 2013
Applicant:

The Aerospace Corporation, El Segundo, CA (US);

Inventors:

David P. Taylor, Hawthorne, CA (US);

Margaret H. Abraham, Portola Valley, CA (US);

Assignee:

The Aerospace Corporation, El Segundo, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); B81C 1/00 (2006.01); C23C 16/01 (2006.01); C23C 16/18 (2006.01); C23C 16/48 (2006.01); H01L 21/3065 (2006.01); C23C 16/04 (2006.01); C23C 16/46 (2006.01); H01L 27/13 (2006.01); H01L 49/02 (2006.01); G01J 5/02 (2006.01); G02B 5/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28506 (2013.01); B81C 1/00373 (2013.01); C23C 16/01 (2013.01); C23C 16/04 (2013.01); C23C 16/18 (2013.01); C23C 16/46 (2013.01); C23C 16/481 (2013.01); C23C 16/483 (2013.01); G01J 5/024 (2013.01); H01L 21/3065 (2013.01); H01L 27/13 (2013.01); H01L 28/40 (2013.01); H01L 28/87 (2013.01); B81B 2203/0109 (2013.01); B81C 2201/0176 (2013.01); B81C 2201/0188 (2013.01); G02B 5/285 (2013.01);
Abstract

Embodiments of the present invention provide systems and methods for depositing materials on either side of a freestanding film using selectively thermally-assisted chemical vapor deposition (STA-CVD), and structures formed using same. A freestanding film, which is suspended over a cavity defined in a substrate, is exposed to a fluidic CVD precursor that reacts to form a solid material when exposed to heat. The freestanding film is then selectively heated in the presence of the precursor. The CVD precursor preferentially deposits on the surface(s) of the freestanding film.


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