The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Nov. 21, 2016
Rfhic Corporation, Anyang, KR;
Firooz Nasser-Faili, Santa Clara, CA (US);
Other;
Abstract
Disclosed is a semiconductor device structure including a III-V compound semiconductor material layer, a polycrystalline CVD diamond material layer, and an interface region, having a diamond nucleation layer, between the III-V compound semiconductor material layer and the polycrystalline CVD diamond material layer. A Raman signal generated from a region having the diamond nucleation layer exhibits an sp3 carbon peak at 1332 cmhaving a full width half-maximum of no more than 5.0 cm. The Raman signal further exhibits one or both of the following characteristics: (i) an sp2 carbon peak at 1550 cmhaving a height no more than 20% of a height of the sp3 carbon peak; and (ii) the sp3 carbon peak at 1332 cmis no less than 10% of local background intensity. The diamond nucleation layer further includes an average nucleation density range of 1×10cmto 1×10cm.