The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Aug. 09, 2012
Hee Woo Rhee, Seoul, KR;
BO Ra Shin, Seoul, KR;
Kyu Yoon Choi, Seoul, KR;
Bum Suk Kim, Seoul, KR;
INDUSTRY-UNIVERSITY COOPERATION FOUNDATION, Seoul, KR;
SOGANG UNIVERSITY, Seoul, KR;
Abstract
The present invention provides a method for preparing a nanoporous ultra-low dielectric thin film including a high-temperature ozone treatment and nanoporous ultra-low dielectric thin film prepared by the same method. The method includes preparing a mixture of an organic silicate matrix-containing solution and a reactive porogen-containing solution; coating the mixture on a substrate to form a thin film; and heating the thin film with an ozone treatment. The prepared nanoporous ultra-low dielectric thin film could have a dielectric constant of about 2.3 or less and a mechanical strength of about 10 GPa or more by improving a pore size and a distribution of pores in the thin film by performing an ozone treatment with high temperature and optimization of the ozone treatment temperature.