The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2017

Filed:

Dec. 22, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Bruce G. Elmegreen, Goldens Bridge, NY (US);

Glenn J. Martyna, Croton on Hudson, NY (US);

Dennis M. Newns, Yorktown Heights, NY (US);

Alejandro G. Schrott, New York, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/40 (2006.01); G11C 13/00 (2006.01); G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 11/22 (2013.01); G11C 11/221 (2013.01); G11C 11/2275 (2013.01); G11C 13/00 (2013.01); G11C 13/0002 (2013.01); G11C 13/0004 (2013.01); G11C 2013/0095 (2013.01); G11C 2213/79 (2013.01);
Abstract

A nonvolatile memory storage device includes a ferroelectric (FE) material coupled with a piezoresistive (PR) material through an inherent piezoelectric response of the FE material, wherein an electrical resistance of the PR material is dependent on a compressive stress applied thereto, the compressive stress caused by a remanent strain of the FE material resulting from a polarization of the FE material, such that a polarized state of the FE material results in a first resistance value of the PR material, and a depolarized state of the FE material results in a second resistance value of the PR material.


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