The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Nov. 04, 2016
Carver Scientific, Inc., Baton Rouge, LA (US);
David Reginald Carver, Baton Rouge, LA (US);
Sean Claudius Hall, Baton Rouge, LA (US);
Chase Koby Andrepont, Prairieville, LA (US);
Sean William Reynolds, Baton Rouge, LA (US);
Jaime Hayes Gibbs, Pensacola, FL (US);
Bradford Wesley Fulfer, Baton Rouge, LA (US);
Carver Scientific, Inc., Baton Rouge, LA (US);
Abstract
Embodiments of an electroentropic memory device comprising an array of electroentropic storage devices (EESDs) are disclosed, as well as methods of making and using the electroentropic memory device. The memory device includes a plurality of address lines arranged in rows to select a row of the EESDs and a plurality of data lines arranged in columns to select a column of the EESDs, wherein each EESD is coupled in series between an address line connected to one side of the EESD and a data line connected to an opposing side of the EESD. The memory device may have a stacked architecture with multiple layers of address lines, data lines, and EESDs. The disclosed electroentropic memory devices are operable in ROM and RAM modes. EESDs in the disclosed electroentropic memory devices may include from 2-4096 logic states and/or have a density from 0.001 kb/cmto 1024 TB/cm.