The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Jul. 23, 2014
Applicants:
Imec Vzw, Leuven, BE;
Universiteit Gent, Ghent, BE;
Inventors:
Yu Hui, Hangzhou, CN;
Wim Bogaerts, Melle, BE;
Assignees:
IMEC VZW, Leuven, BE;
Universiteit Gent, Ghent, BE;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/025 (2006.01); G02F 1/01 (2006.01); G02F 1/313 (2006.01);
U.S. Cl.
CPC ...
G02F 1/025 (2013.01); G02F 1/0121 (2013.01); G02F 1/3132 (2013.01); G02F 2201/58 (2013.01); G02F 2203/15 (2013.01);
Abstract
A carrier-depletion based silicon waveguide resonant cavity modulator includes a silicon waveguide based resonant cavity. The resonant cavity includes an optical modulation section and an optical power monitoring section. The optical power monitoring section includes an integrated lateral PIN diode including a doping compensated I region having a high defect density and a low net free carrier concentration. The doping compensated I region may be formed by performing a P-type implantation step and an N-type implantation step with overlapping ion implantation windows.