The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Jul. 09, 2014
Texas Instruments Incorporated, Dallas, TX (US);
Ming Fang, Plano, TX (US);
Faheem Zain Mohamedi, Arlington, TX (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
A method for performing a semiconductor parametric test comprising performing a full voltage sweep for a first component on a first semiconductor wafer to determine a first value of an electrical characterization parameter for the first component, wherein the full voltage sweep comprises a range between about a minimum input voltage level of the first component and about a maximum input voltage level of the first component, determining a smart sensing window (SSW) for a plurality of subsequent components on the first semiconductor wafer according to the first value, wherein the SSW comprises a range comprising a portion of the full voltage sweep range, performing a partial voltage sweep in the SSW for each of the subsequent components to determine a second value of the electrical characterization parameter for each of the subsequent semiconductor components, and adapting the SSW for at least some of the subsequent components.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile