The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Oct. 08, 2015
The Regents of the University of Michigan, Ann Arbor, MI (US);
Xiaogan Liang, Ann Arbor, MI (US);
Katsuo Kurabayashi, Ann Arbor, MI (US);
The Regents Of The University Of Michigan, Ann Arbor, MI (US);
Abstract
Atomically layered transition metal dichalcogenides (TMDCs) exhibit a significant potential to enable low-cost transistor biosensors that permit single-molecule-level quantification of biomolecules. Two different principles for operating such biosensors are presented. In one arrangement, antibody receptors are functionalized on an insulating layer deposited onto the channel of the transistor. The charge introduced through antigen-antibody binding is capacitively coupled with the channel and shifts the threshold voltage without significantly changing the transconductance. In another arrangement, antibodies are functionalized directly on the channel of the transistor. Antigen-antibody binding events mainly modulate the ON-state transconductance, which is attributed to the disordered potential formed in channel material.