The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2017

Filed:

Apr. 24, 2015
Applicant:

Eastman Kodak Company, Rochester, NY (US);

Inventors:

Ronald Steven Cok, Rochester, NY (US);

Mitchell Stewart Burberry, Webster, NY (US);

Assignee:

EASTMAN KODAK COMPANY, Rochester, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); C02F 1/46 (2006.01);
U.S. Cl.
CPC ...
C02F 1/4604 (2013.01); G03F 7/0002 (2013.01);
Abstract

A method of making a micro-channel electrode structure includes providing a curable layer and imprinting the curable layer to form an electrode micro-channel and a fluid micro-channel in a common step. The electrode micro-channel intersects the fluid micro-channel to form a micro-channel intersection. The curable layer is cured to form an imprinted cured layer. Both the electrode and the fluid micro-channels are filled with a developable material that is exposed with an electrode pattern including the electrode micro-channel and extending from the electrode micro-channel into the micro-channel intersection without occluding the fluid micro-channel. The exposed developable material is developed to remove the developable material from the electrode pattern and the electrode micro-channel and the micro-channel intersection corresponding to the electrode pattern are at least partly filled with a conductive material. At least a portion of the remaining developable material is removed from the fluid micro-channel.


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