The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2017

Filed:

May. 14, 2015
Applicant:

University of Dayton, Dayton, OH (US);

Inventor:

Lingchuan Li, Dayton, OH (US);

Assignee:

University of Dayton, Dayton, OH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/34 (2006.01); C01B 21/064 (2006.01); C23C 16/22 (2006.01); C23C 16/24 (2006.01); C23C 16/46 (2006.01); C01B 33/029 (2006.01);
U.S. Cl.
CPC ...
C01B 21/064 (2013.01); C01B 33/029 (2013.01); C23C 16/22 (2013.01); C23C 16/24 (2013.01); C23C 16/46 (2013.01); C23C 16/463 (2013.01); C01P 2002/72 (2013.01); C01P 2002/82 (2013.01); C01P 2004/04 (2013.01); C01P 2004/13 (2013.01);
Abstract

Methods of growing boron nitride nanotubes and silicon nanowires on carbon substrates formed from carbon fibers. The methods include applying a catalyst solution to the carbon substrate and heating the catalyst coated carbon substrate in a furnace in the presence of chemical vapor deposition reactive species to form the boron nitride nanotubes and silicon nanowires. A mixture of a first vapor deposition precursor formed from boric acid and urea and a second vapor deposition precursor formed from iron nitrate, magnesium nitrate, and D-sorbitol are provided to the furnace to form boron nitride nanotubes. A silicon source including SiHis provided to the furnace at atmospheric pressure to form silicon nanowires.


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