The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2017

Filed:

May. 08, 2015
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Masataka Kato, Hiratsuka, JP;

Hiroshi Higuchi, Atsugi, JP;

Yoshinao Ogata, Fukushima, JP;

Seiko Minami, Warabi, JP;

Masaya Uyama, Kawasaki, JP;

Toshiyasu Sakai, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B41J 2/16 (2006.01); H01L 21/306 (2006.01); B41J 2/14 (2006.01);
U.S. Cl.
CPC ...
B41J 2/1645 (2013.01); B41J 2/1404 (2013.01); B41J 2/14145 (2013.01); B41J 2/1603 (2013.01); B41J 2/1626 (2013.01); B41J 2/1628 (2013.01); B41J 2/1631 (2013.01); H01L 21/306 (2013.01);
Abstract

A substrate processing method includes forming a first hole in a first surface of a silicon substrate to have a depth that it does not extend through the substrate and forming a second hole in a second surface to make the second hole to communicate with the first hole, so that a through hole formed of the first and second holes is formed in the substrate. The process of forming the second hole includes forming a communication portion wider than an opening of the first hole between the first and second holes after the second hole has been made to communicate with the first hole by dry etching.


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