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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9676047 B1

PDFFull Text
Date of Patent:
Jun. 13, 2017

Filed:

Dec. 12, 2014

Method of forming metal bonding layer and method of manufacturing semiconductor light emitting device using the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Yung Ho Ryu, Suwon-si, KR;

Seung Woo Choi, Seoul, KR;

Tae Hun Kim, Anyang-si, KR;

Gyeong Seon Park, Seoul, KR;

Jong Hoon Lim, Suwon-si, KR;

Sung Joon Kim, Suwon-si, KR;

Myong Soo Cho, Yongin-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;

Attorney:

Lee & Morse, P.C.

Primary Examiner:

Alexander Ghyka

Int. Cl.
CPC ...
H01L 33/62 (2010.01); B23K 1/20 (2006.01); B23K 1/00 (2006.01); B23K 35/26 (2006.01); B23K 35/28 (2006.01); B23K 35/30 (2006.01); B23K 35/32 (2006.01); B23K 35/02 (2006.01); H01L 23/00 (2006.01); H01L 33/00 (2010.01); B23K 20/02 (2006.01); B23K 20/16 (2006.01); B23K 20/233 (2006.01); B23K 101/40 (2006.01); B23K 101/42 (2006.01);
U.S. Cl.
CPC ...
B23K 1/0016 (2013.01); B23K 1/20 (2013.01); B23K 20/026 (2013.01); B23K 20/16 (2013.01); B23K 20/233 (2013.01); B23K 35/0238 (2013.01); B23K 35/0261 (2013.01); B23K 35/0272 (2013.01); B23K 35/262 (2013.01); B23K 35/264 (2013.01); B23K 35/268 (2013.01); B23K 35/282 (2013.01); B23K 35/302 (2013.01); B23K 35/3013 (2013.01); B23K 35/3033 (2013.01); B23K 35/3046 (2013.01); B23K 35/32 (2013.01); B23K 35/322 (2013.01); H01L 24/29 (2013.01); H01L 24/83 (2013.01); H01L 33/0079 (2013.01); B23K 2201/40 (2013.01); B23K 2201/42 (2013.01); H01L 2224/83193 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/12042 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A method of forming a metal bonding layer includes forming first and second bonding metal layers on one surfaces of first and second bonding objects, respectively. The second bonding object is disposed on the first bonding object such that the first bonding metal layer and the second bonding metal layer face each other. A eutectic metal bonding layer is formed through a reaction between the first and second bonding metal layers. At least one of the first bonding metal layer and the second bonding metal layer includes an oxidation prevention layer formed on an upper surface thereof. The oxidation prevention layer is formed of a metal having an oxidation reactivity lower than an oxidation reactivity of the bonding metal layer on the upper surface which the oxidation prevention layer is disposed.

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