The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2017

Filed:

Apr. 29, 2014
Applicant:

Stichting Imec Nederland, Eindhoven, NL;

Inventors:

Roman Vitushinsky, Vaals, NL;

Peter Offermans, Eindhoven, NL;

Assignee:

Stichting IMEC Nederland, Eindhoven, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
A61B 5/0408 (2006.01); H01L 27/088 (2006.01); H01L 29/778 (2006.01); H01L 29/423 (2006.01); G01N 27/12 (2006.01); G01N 27/414 (2006.01); A61B 5/021 (2006.01); A61B 5/0452 (2006.01); A61B 5/00 (2006.01);
U.S. Cl.
CPC ...
A61B 5/0408 (2013.01); G01N 27/129 (2013.01); G01N 27/414 (2013.01); H01L 27/088 (2013.01); H01L 29/4236 (2013.01); H01L 29/42372 (2013.01); H01L 29/7786 (2013.01); A61B 5/02125 (2013.01); A61B 5/0452 (2013.01); A61B 5/6824 (2013.01);
Abstract

The disclosed technology generally relates to sensors comprising a two-dimensional electron gas (2DEG), and more particularly to an AlGaN/GaN 2DEG-based sensor for sensing signals associated with electrocardiograms, and methods of using the same. In one aspect, a sensor comprises a substrate and a GaN/AlGaN hetero-junction structure formed on the substrate and configured to form a two-dimensional electron gas (2DEG) channel within the GaN/AlGaN hetero-junction structure. The sensor additionally comprises Ohmic contacts connected to electrical metallizations and to the 2DEG channel, wherein the GaN/AlGaN hetero-junction structure has a recess formed between the Ohmic contacts. The sensor further comprises a dielectric layer formed on a top surface of the sensor.


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