The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2017

Filed:

Jan. 28, 2015
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventor:

Yoh Takano, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03B 1/00 (2006.01); H03K 3/00 (2006.01); H03K 17/687 (2006.01); H02M 1/08 (2006.01); H03K 17/06 (2006.01); H03K 17/691 (2006.01); H02M 1/38 (2007.01);
U.S. Cl.
CPC ...
H03K 17/687 (2013.01); H02M 1/08 (2013.01); H03K 17/063 (2013.01); H03K 17/691 (2013.01); H02M 1/38 (2013.01); H03K 2217/0081 (2013.01);
Abstract

A gate driver that drives a field-effect transistor on the basis of an input signal includes a comparator that compares an applied voltage applied between the drain and the source of a field-effect transistor to a reference voltage for detecting noise occurring between the drain and the source of the field-effect transistor, and a gate voltage switching circuit that, if the field-effect transistor is off, switches the voltage applied between the gate and the source of the field-effect transistor from a first voltage to a second voltage when the output of the comparator transitions from a state indicating that the applied voltage between the drain and the source is less than the reference voltage to a state indicating that the applied voltage between the drain and the source is equal to or greater than the reference voltage.


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