The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Apr. 27, 2011
Marcus Granger-jones, Scotts Valley, CA (US);
Christian Rye Iversen, Vestbjerg, DK;
Marcus Granger-Jones, Scotts Valley, CA (US);
Christian Rye Iversen, Vestbjerg, DK;
Qorvo US, Inc., Greensboro, NC (US);
Abstract
Described are embodiments of stacked field effect transistor (FET) switch having a plurality of FET devices coupled in series to form an FET device stack. To prevent the FET device stack from being turned on during large signal conditions, one or more decoupling paths are provided and are configured to pass the time-variant input signal during the open state of the FET device stack. The first decoupling path may include a capacitor, a transistor, or the like, that passes the time-variant input signal by, for example, presenting a low impedance to the time-variant input signal during the open state. The decoupling paths may be connected so that the time-variant input signal bypasses a portion of the FET device stack during the open state.