The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2017

Filed:

Oct. 22, 2015
Applicants:

Skyworks Solutions, Inc., Woburn, MA (US);

Snaptrack, Inc., San Diego, CA (US);

Inventors:

Peter Harris Robert Popplewell, Ottawa, CA;

Jakub F. Pingot, Ottawa, CA;

Florinel G. Balteanu, Irvine, CA (US);

Martin Wilson, Caldecote, GB;

Mark Tuckwell, Knebworth, GB;

Assignees:

SKYWORKS SOLUTIONS, INC., Woburn, MA (US);

SNAPTRACK, INC., San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/04 (2006.01); H02M 3/158 (2006.01); H03F 1/02 (2006.01); H03F 3/19 (2006.01); H02M 3/156 (2006.01); H03F 3/195 (2006.01); H03F 3/193 (2006.01); H03F 3/21 (2006.01);
U.S. Cl.
CPC ...
H02M 3/158 (2013.01); H02M 3/156 (2013.01); H03F 1/025 (2013.01); H03F 1/0211 (2013.01); H03F 1/0227 (2013.01); H03F 3/19 (2013.01); H03F 3/193 (2013.01); H03F 3/195 (2013.01); H03F 3/211 (2013.01); H03F 2200/102 (2013.01); H03F 2200/451 (2013.01); H03F 2203/21106 (2013.01);
Abstract

Apparatus and methods for bypassing an inductor of a voltage converter are provided. In one embodiment, a voltage converter includes an inductor and a bypass circuit that selectively bypasses the inductor based on a state of a bypass control signal. The inductor includes including a first end electrically connected to a first node and a second end electrically connected to a second node. The bypass circuit includes a first p-type field effect transistor and a second p-type field effect transistor electrically connected in series between the first node and the second node. The first p-type field effect transistor includes a body electrically connected to a first voltage, and the second p-type field effect transistor includes a body electrically connected to a second voltage greater than the first voltage.


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