The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2017

Filed:

Aug. 12, 2013
Applicant:

Commissariat a L'energie Atomique ET Aux Ene Alt, Paris, FR;

Inventors:

Francois Boulard, Grenoble, FR;

Olivier Gravrand, Fontanil Cornillon, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 23/00 (2006.01); H01L 33/46 (2010.01); H01L 33/62 (2010.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 33/0083 (2013.01); H01L 24/10 (2013.01); H01L 27/1465 (2013.01); H01L 27/14636 (2013.01); H01L 27/14689 (2013.01); H01L 33/46 (2013.01); H01L 33/62 (2013.01); H01L 27/1464 (2013.01); H01L 27/14634 (2013.01); H01L 2924/01049 (2013.01); H01L 2924/12043 (2013.01);
Abstract

A semi-conducting component including a semi-conducting layer of a first conductivity type including a plurality of semi-conducting zones of a second conductivity type opposite that of the semi-conducting layer, and an insulating layer. The component further includes a first bias mechanism configured to bias the semi-conducting layer and a second bias mechanism configured to bias a semi-conducting zone. The first bias mechanism includes a conducting layer in contact with the insulating layer and which includes passageways for each second bias mechanism with the spacing between the conducting layer and the second bias mechanism which is located facing the corresponding semi-conducting zone.


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