The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9673342 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 06, 2017

Filed:

Jan. 19, 2015
Applicant:

The Chemours Company Fc Llc, Wilmington, DE (US);

Inventors:

Seung Jin Lee, Kyunggi-Do, KR;

Hee Soo Yeo, Ulsan, KR;

Assignee:

THE CHEMOURS COMPANY FC, LLC, Wilmington, DE (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0236 (2006.01); H01L 31/0368 (2006.01); H01L 21/306 (2006.01); B44C 1/22 (2006.01); C09K 13/08 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02363 (2013.01); C09K 13/08 (2013.01); H01L 31/0236 (2013.01); H01L 31/03682 (2013.01); H01L 31/182 (2013.01); Y02E 10/50 (2013.01); Y10T 428/24479 (2015.01);
Abstract

A method of texturizing a silicon substrate comprising a) contacting the substrate with an etching solution comprising glycolic acid, b) etching a surface of the substrate thereby forming disruptions in said surface of the substrate, and c) removing the etching solution to yield a texturized substrate, said texturized substrate having a plurality of disruptions in at least one surface with a surface density of disruptions of a minimum of 60 disruptions in a 400 micron square area.


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Lee, Seung. (2017). Textured silicon substrate and method (U.S. Patent No. 9673342). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9673342

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