logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9673313 B1

PDFFull Text
Date of Patent:
Jun. 06, 2017

Filed:

Mar. 18, 2013

Silicon carbide semiconductor device and fabrication method thereof

Applicants:

Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;

National Institute of Advanced Industrial Science and Technology, Tokyo, JP;

Inventors:

Atsushi Tanaka, Tsukuba, JP;

Noriyuki Iwamuro, Tsukuba, JP;

Shinsuke Harada, Tsukuba, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-shi, JP;

Attorney:

Westerman, Hattori, Daniels & Adrian, LLP

Primary Examiner:

Kimberly Rizkallah

Assistant Examiner:

Brian Turner

Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/336 (2006.01); H01L 29/12 (2006.01); H01L 29/24 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 21/04 (2006.01); H01L 29/423 (2006.01); H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7802 (2013.01); H01L 21/046 (2013.01); H01L 29/045 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/4238 (2013.01); H01L 29/66068 (2013.01); H01L 29/66325 (2013.01); H01L 29/66712 (2013.01); H01L 29/7395 (2013.01); H01L 29/0634 (2013.01); H01L 29/1608 (2013.01);
Abstract

A silicon carbide semiconductor device has a first-conductivity-type semiconductor layer having a lower impurity concentration and formed on a first-conductivity-type semiconductor substrate, a second-conductivity-type semiconductor layer having a higher impurity concentration and selectively formed in the first-conductivity-type semiconductor layer, a second-conductivity-type base layer having a lower impurity concentration formed on a surface of the second-conductivity-type semiconductor layer, a first-conductivity-type source region selectively formed in a surface layer of the base layer, a first-conductivity-type well region formed to penetrate the base layer from a surface to the first-conductivity-type semiconductor layer, and a gate electrode formed via a gate insulation film on a surface of the base layer interposed between the source region and the well region. Portions of the respective second-conductivity-type semiconductor layers of different cells can be connected to each other by a connecting portion in a region under the well region.

Find Patent Forward Citations

Loading…