The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Aug. 20, 2015
Applicant:
Rf Micro Devices, Inc., Greensboro, NC (US);
Inventors:
David Charles Sheridan, Greensboro, NC (US);
Xing Huang, Ewing, NJ (US);
Assignee:
Qorvo US, Inc., Greensboro, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 21/8236 (2006.01); H03K 17/082 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); H01L 21/8236 (2013.01); H01L 27/0883 (2013.01); H01L 29/16 (2013.01); H03K 17/0822 (2013.01);
Abstract
A power semiconductor device has an upper transistor and a lower transistor that is coupled in cascode with the upper transistor. The upper transistor comprises an upper drain, upper gate, and an upper source. The lower transistor comprises a lower drain that is coupled to the upper source, a lower gate, and a lower source that is coupled to the upper gate. The upper transistor is a depletion mode device and has a first saturation current. The lower transistor is an enhancement mode device and has a second saturation current, which is lower than the first saturation current.