The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Dec. 13, 2013
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 21/04 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 21/324 (2006.01); H01L 21/265 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7395 (2013.01); H01L 21/0415 (2013.01); H01L 21/324 (2013.01); H01L 29/0821 (2013.01); H01L 29/0847 (2013.01); H01L 29/66333 (2013.01); H01L 21/26513 (2013.01); H01L 29/167 (2013.01);
Abstract
According to the present invention, since the buffer layer is formed by multiple ion implantations of different acceleration energies and the non-diffusion region in which impurity do not diffuse is left between the buffer layer and the collector layer, the semiconductor device which can supply sufficient holes to the drift layer at the turn-off can be manufactured while the withstand voltage is ensured.