The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Mar. 08, 2016
Applicant:
Infineon Technologies Dresden Gmbh, Dresden, DE;
Inventors:
Assignee:
INFINEON TECHNOLOGIES DRESDEN GMBH, Dresden, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/732 (2006.01); H01L 29/737 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66272 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/26513 (2013.01); H01L 21/324 (2013.01); H01L 29/0649 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/1004 (2013.01); H01L 29/165 (2013.01); H01L 29/41708 (2013.01); H01L 29/42304 (2013.01); H01L 29/66242 (2013.01); H01L 29/66287 (2013.01); H01L 29/732 (2013.01); H01L 29/7371 (2013.01); H01L 29/7378 (2013.01);
Abstract
According to various embodiments, a bipolar transistor structure may include: a substrate; a collector region in the substrate; a base region disposed over the collector region, an emitter region disposed over the base region; a base terminal laterally electrically contacting the base region, wherein the base terminal includes polysilicon.