The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2017

Filed:

Sep. 04, 2011
Applicants:

Emmanuel Defay, Voreppe, FR;

Gwenaël Le Rhun, Renage, FR;

Aurélien Suhm, Grenoble, FR;

Inventors:

Emmanuel Defay, Voreppe, FR;

Gwenaël Le Rhun, Renage, FR;

Aurélien Suhm, Grenoble, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01G 4/005 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/55 (2013.01); H01L 28/40 (2013.01); H01L 28/65 (2013.01); H01L 21/02197 (2013.01); H01L 21/02282 (2013.01);
Abstract

An integrated capacitor comprises a layer of dielectric material known as functional dielectric material based on crystallized material of perovskite type, between at least one first electrode known as a bottom electrode at the surface of a substrate and at least one second electrode known as a top electrode, said electrodes being electrically insulated by a layer of electrically insulating material in order to allow at least one contact on the top electrode. The electrically insulating material is made of an amorphous dielectric material of perovskite type having a dielectric constant lower than that of the crystallized material of perovskite type. The contact is formed from an etched contacting layer in contact with the electrically insulating dielectric layer level with its surface parallel to the plane of the layers. A process for manufacturing such an integrated capacitor is also provided.


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