The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2017

Filed:

Apr. 27, 2016
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Koji Hara, Ichikawa, JP;

Nobutaka Ukigaya, Yokohama, JP;

Takeshi Aoki, Oita, JP;

Yukinobu Suzuki, Koza-gun, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14698 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01);
Abstract

A method of manufacturing a photoelectric conversion device includes forming, with material containing aluminum, an electrically conductive pattern on a semiconductor substrate including a photoelectric converter, forming, on the electrically conductive pattern, an insulating film containing hydrogen, performing first annealing in a hydrogen-containing atmosphere, forming, on the insulating film, a protective film having lower hydrogen permeability than that of the insulating film after the first annealing, and performing second annealing in the hydrogen-containing atmosphere. Temperature in the first annealing is not less than temperature when forming the insulating film and not more than temperature when forming the protective film.


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