The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2017

Filed:

Jul. 20, 2015
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Shin Iwabuchi, Kanagawa, JP;

Kazuhide Yokota, Kanagawa, JP;

Takeshi Yanagita, Tokyo, JP;

Yasushi Maruyama, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/113 (2006.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1464 (2013.01); H01L 27/1463 (2013.01); H01L 27/1469 (2013.01); H01L 27/14601 (2013.01); H01L 27/14634 (2013.01); H01L 27/14636 (2013.01); H01L 27/14638 (2013.01); H01L 27/14643 (2013.01); H01L 27/14687 (2013.01); H01L 31/035272 (2013.01); H01L 31/1136 (2013.01); H01L 2224/056 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48145 (2013.01); H01L 2224/48464 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/3025 (2013.01);
Abstract

A back-illuminated type solid-state image pickup device () includes read circuits (Tr, Tr) formed on one surface of a semiconductor substrate () to read a signal from a photo-electric conversion element (PD) formed on the semiconductor substrate (), in which electric charges (e) generated in a photo-electric conversion region () formed under at least one portion of the read circuits (Tr, Tr) are collected to an electric charge accumulation region () formed on one surface side of the semiconductor substrate () of the photo-electric conversion element (PD) by electric field formed within the photo-electric conversion element (PD). Thus, the solid-state image pickup device and the camera are able to make the size of pixel become very small without lowering a saturation electric charge amount (Qs) and sensitivity.


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