The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Mar. 17, 2015
Newport Fab, Llc, Newport Beach, CA (US);
Edward Preisler, San Clemente, CA (US);
Todd Thibeault, Irvine, CA (US);
Newport Fab, LLC, Newport Beach, CA (US);
Abstract
A bipolar complementary-metal-oxide-semiconductor (BiCMOS) device is disclosed. The BiCMOS device includes a CMOS device in a CMOS region, a PNP bipolar device in a bipolar region, and a spacer clear region defined by an opening in a common spacer layer over the CMOS region and the bipolar region, wherein a sub-collector, a selectively implanted collector, and a base of the PNP bipolar device are formed in the spacer clear region. The PNP bipolar device further includes a collector sinker adjacent to the spacer clear region and electrically connected to the sub-collector of the PNP bipolar device. The BiCMOS device can further include an NPN bipolar device having a sub-collector, a selectively implanted collector and a base in another spacer clear region.