The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Jul. 10, 2015
Analog Devices, Inc., Norwood, MA (US);
Javier Alejandro Salcedo, North Billerica, MA (US);
Jonathan Pfeifer, Summerfield, NC (US);
ANALOG DEVICES, INC., Norwood, MA (US);
Abstract
The disclosed technology relates to electronics, and more particularly, to protection devices that protect circuits from transient electrical events such as electrical overstress/electrostatic discharge. A protection device includes a semiconductor substrate having formed therein at least two wells and a deep well underlying and contacting the at least two wells. The device additionally includes a first PN diode formed in one of the at least two wells and having a first heavily doped region of a first conductivity type and a first heavily doped region of a second conductivity type, and includes a second PN diode formed in one of the at least two wells and having a second heavily doped region of the first conductivity type and a second heavily doped region of the second conductivity type. The device additionally includes a first PN diode and the second PN diode are electrically shorted by an electrical shorting structure to form a first plurality of serially connected diodes having a threshold voltage. The device further includes a PNPN silicon-controlled rectifier (SCR) having a trigger voltage and comprising the first heavily doped region of the first conductivity type, the at least two wells, the deep well, and the second heavily doped region of the second conductivity type.