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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9673139 B1

PDFFull Text
Date of Patent:
Jun. 06, 2017

Filed:

May. 20, 2016

Semiconductor device

Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Hiroshige Hirano, Toyama, JP;

Michinari Tetani, Toyama, JP;

Masakazu Hamada, Toyama, JP;

Nobuaki Tarumi, Osaka, JP;

Assignee:

PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD., Osaka, JP;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Hsien Ming Lee

Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/053 (2006.01); H01L 23/52 (2006.01); H01L 21/44 (2006.01); H01L 21/4763 (2006.01); H01L 23/498 (2006.01); C25D 5/12 (2006.01); H01L 23/532 (2006.01); C25D 7/12 (2006.01); C25D 5/02 (2006.01); H01L 23/00 (2006.01); H01L 21/288 (2006.01); H01L 21/70 (2006.01); H01L 21/768 (2006.01); H01L 23/492 (2006.01);
U.S. Cl.
CPC ...
H01L 23/498 (2013.01); C25D 5/022 (2013.01); C25D 5/12 (2013.01); C25D 7/123 (2013.01); H01L 21/2885 (2013.01); H01L 21/705 (2013.01); H01L 21/76843 (2013.01); H01L 21/76865 (2013.01); H01L 21/76873 (2013.01); H01L 21/76879 (2013.01); H01L 21/76885 (2013.01); H01L 23/4924 (2013.01); H01L 23/49811 (2013.01); H01L 23/49838 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/0347 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03903 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05013 (2013.01); H01L 2224/05024 (2013.01); H01L 2224/05027 (2013.01); H01L 2224/05084 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05547 (2013.01); H01L 2224/05553 (2013.01); H01L 2224/05564 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/1403 (2013.01); H01L 2224/14155 (2013.01);
Abstract

A semiconductor device includes a first insulating film, a first wiring, a second insulating film, and a second wiring. The first insulating film is formed on a semiconductor substrate. The first wiring is formed on the first insulating film. The second insulating film is provided on the first insulating film to cover the first wiring. The second wiring is formed on the second insulating film. Furthermore, the second insulating film has a first opening part and a second opening part which expose the first wiring. The second wiring has a seed layer and a first plating layer. The first plating layer covers an entire side surface of the seed layer. The seed layer is not provided in the second opening part and a periphery thereof.

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