The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Nov. 05, 2015
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 21/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/283 (2006.01);
U.S. Cl.
CPC ...
H01L 22/32 (2013.01); H01L 21/02488 (2013.01); H01L 21/283 (2013.01); H01L 29/0653 (2013.01); H01L 29/78 (2013.01);
Abstract
The present disclosure provides a test structure which includes an SOI substrate having an active semiconductor layer, a buried insulating material layer, and a base substrate, wherein the active semiconductor layer is formed on the buried insulating material layer, which, in turn, is formed on the base substrate. The test structure further includes a contact which is formed on the active semiconductor layer and electrically coupled to the active semiconductor layer. Herein, the contact has a tip portion extending through the active semiconductor layer into the buried insulating material layer.