The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Dec. 16, 2014
Fujifilm Corporation, Minato-ku, Tokyo, JP;
Masashi Ono, Kanagawa, JP;
Masahiro Takata, Kanagawa, JP;
Toshiya Ideue, Kanagawa, JP;
Atsushi Tanaka, Kanagawa, JP;
Masayuki Suzuki, Kanagawa, JP;
FUJIFILM Corporation, Tokyo, JP;
Abstract
A method of producing a thin film transistor includes: forming a gate electrode; forming a gate insulating film that contacts the gate electrode; forming, by a liquid phase method, an oxide semiconductor layer arranged facing the gate electrode with the gate insulating film provided therebetween, the oxide semiconductor layer including a first region and a second region, the first region being represented by InGaZnO, the second region being represented by InGaZnO, and the second region being located farther from the gate electrode than the first region; and forming a source electrode and a drain electrode that are arranged apart from each other and are capable of being conductively connected through the oxide semiconductor layer.