The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2017

Filed:

Sep. 01, 2015
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Robert Jan Visser, Menlo Park, CA (US);

Ranga Rao Arnepalli, Krishna, IN;

Prerna Goradia, Mumbia / Maharashtra, IN;

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/02 (2006.01); C23C 16/24 (2006.01); C23C 16/56 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02271 (2013.01); C23C 16/0227 (2013.01); C23C 16/24 (2013.01); C23C 16/56 (2013.01); H01L 21/02043 (2013.01); H01L 21/02068 (2013.01); H01L 21/02301 (2013.01); H01L 21/02312 (2013.01); H01L 21/76831 (2013.01);
Abstract

A method of processing includes: providing a substrate having a contaminant material disposed on the copper surface to a substrate support within a hot wire chemical vapor deposition (HWCVD) chamber; providing hydrogen (H) gas to the HWCVD chamber; heating one or more filaments disposed in the HWCVD chamber to a temperature sufficient to dissociate the hydrogen (H) gas; exposing the substrate to the dissociated hydrogen (H) gas to remove at least some of the contaminant material from the copper surface; cooling the one or more filaments to room temperature; exposing the substrate in the HWCVD chamber to one or more chemical precursors to deposit a self-assembled monolayer atop the copper surface; and depositing a second layer atop the substrate.


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