The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2017

Filed:

Jan. 14, 2016
Applicants:

Seok-min Yoon, Seoul, KR;

Myung-hoon Choi, Suwon-si, KR;

Inventors:

Seok-Min Yoon, Seoul, KR;

Myung-Hoon Choi, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/16 (2006.01); G11C 16/34 (2006.01); G11C 16/04 (2006.01); G11C 16/14 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3445 (2013.01); G11C 16/0483 (2013.01); G11C 16/14 (2013.01); G11C 16/344 (2013.01);
Abstract

Provided is a method of operating a non-volatile memory device including a plurality of strings, each string including a plurality of memory cells vertically stacked on a substrate. The method includes performing an erase operation on memory cells corresponding to a plurality of string selection lines, performing an erase verification operation on first strings connected to a first string selection line from among the plurality of string selection lines, storing fail column information corresponding to a first fail string, which is erase-failed, from among the first strings, and performing an erase verification operation on second strings connected to a second string selection line from among the plurality of string selection lines, when the first strings are erase-passed.


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